We established the calculation formulas for the short-circuit current and open-circuit voltage, and then studied and analyzed the optimization thickness of the semiconductor, doping concentration, and junction depth with simulation of the transport process of β particles in a semiconductor material using the Monte Carlo simulation program MCNP (version 5, Radiation Safety Information Computational Center, Oak Ridge, TN, USA). A novel multi-source energy harvester based on solar and radioisotope energy sources is designed and simulated in this work.
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